SK Hynix in a press release has announced the launch of the world’s first DDR5 memory with transfer speeds of up to 6400Mbps, with a lower voltage compared to DDR4, reducing the power consumption by 20%. Furthermore, the new error-correcting technology allows the correction of even 1-bit level errors. The company is promising its new DDR5 with a capacity of up to 256GB using through-silicon-via (TSV) technology.
SK hynix’s DDR5 supports transfer rate of 4,800 ~ 5,600 Megabit-per-second (Mbps), which is 1.8 times faster than the previous generation – DDR4. It can transmit 9 full-HD (FHD) movies (5GB each) per second with 5,600Mbps transfer rate. Its operating voltage is 1.1V being lowered from 1.2V of DDR4, which means that its power consumption is reduced by 20%.
Another notable specification of the Company’s DDR5 is Error Correcting Code (ECC) inside the chip that can correct even 1-bit-level errors by itself. With the ECC, the reliability of applications will be increased by 20 times. The Company’s DDR5 also could build up to 256 Gigabyte (GB) capacity applying through-silicon-via (TSV) technology.
You can read more about the differences between DDR4 and DDR5 in the below post: